Welcome to Journal of Microelectronic Manufacturing!
2019
Volume 2, Issue 3
  • Published: Sept. 30, 2019
  • Supervised by:None
  • Hosted by:None
  • Published by:JoMM Editorial Office

Research Article top

Current Status of the Integrated Circuit Industry in ChinaEDA Industry Review
Authors: Litho World
Keywords:EDA;China
doi:10.33079/jomm.19020305
Issue 3: 19020305, 2019 | PDF
Research Article
Published: Sept. 29, 2019
Views:4264
Abstract: China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momen...
An Innovative Method to Improve Model Accuracy by Implementing Multi-models Scheme for 28nm Node and Below
Authors: Qingchen Cao, Tianhui Li, Shuying Wang et al.
Institution:SiEn (QingDao) Integrated Circuits Co., Ltd
Keywords:Image quality;lithography;OPC model;multi-model
doi:10.33079/jomm.19020304
Issue 3: 19020304, 2019 | PDF
Research Article
Published: Sept. 28, 2019
Views:5623
Abstract: As the process comes into 28nm node and below, lithography struggles stronger between high resolution (high NA) and enough process window especially for hole layers (Contacts and Vias). Taking more...
Innovation on Line Cut Methods of Self-aligned Multiple Patterning
Authors: Jeff Shu
Institution:GLOBALFOUNDRIES
Keywords:self-aligned multiple patterning;SAMP;self-aligned double patterning;SADP;self-aligned quadruple patterning;SAQP;line cut;edge placement error
doi:10.33079/jomm.19020301
Issue 3: 19020301, 2019 | PDF
Research Article
Published: Sept. 25, 2019
Views:4508
Abstract: Self-aligned multiple patterning (SAMP) can enable the semiconductor scaling before EUV lithography becomes mature for industry use. Theoretically any small size of pitch can be achieved by repeati...
A Simulation Study for Typical Design Rule Patterns in 5 nm Logic Process with EUV Photolithographic Process
Authors: Yanli Li, Qiang Wu, Shoumian Chen
Institution:Shanghai IC R, &, D Center, 497, Gaosi Road, Zhangjiang Hi, -, Tech Park, China
Keywords:5nm design rule;minimum area;minimum exposure latitude;aberration;shadowing effect
doi:10.33079/jomm.19020406
Issue 3: 19020406, 2019 | PDF
Research Article
Published: Dec. 25, 2019
Views:2347
Abstract: 5 nm logic technology node is believed to be the first node that will adopt Extremely Ultra-Violet (EUV) lithography on a large scale. We have done a simulation study for typical 5 nm logic design ...

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A Flexible Pressure Sensor Based on Poly(dimethylsiloxane) Nanostructures Film
Authors: Man Zhang, Liangping Xia, Suihu Dang et al.
Institution:Yangtze Normal University
Keywords:Flexible;pressure sensor;poly(dimethylsiloxane);soft nanoimprint lithography;triboelectrostatic charges
doi:10.33079/jomm.19020302
Issue 3: 19020302, 2019 | PDF
Published: Sept. 26, 2019
Views:2976
Abstract: This paper proposed a flexible pressure sensor based on poly(dimethylsiloxane) nanostructures film and report an efficient, simple, and low-cost fabrication strategy via soft nanoimprint lithograph...
Influence of Chemical Stability on the Fabrication of MnGa-based Devices
Authors: Lijun Zhu, Jianhua Zhao
Institution:Cornell University
Keywords:Keyword: Chemical stability, Perpendicular magnetic anisotropy, Spintronics, Wet etching
doi:10.33079/jomm.19020303
Issue 3: 19020303, 2019 | PDF
Published: Sept. 26, 2019
Views:2356
Abstract: Ferromagnetic films of L10-ordered MnGa have shown promise not only in the applications in ultrahigh-density magnetic recording and spintronic memories, oscillators, and sensors, ...