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Online ISSN: 2578-3769

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A Novel R2R Control Strategy with Virtual Structure Deployment and Rolling Wave Control Plan
Authors: Chang Xu
Institution:Fujian Jinhua Integrated Circuit Co, ., Ltd, ., Jinjiang, Quanzhou, Fujian
Keywords:R2R;manufacturing;control;circuit design;virtual metrology
doi:10.33079/jomm.21040301
Volume 4, Issue 3, 2021 | PDF
Research Article
Published: Sept. 18, 2021
Views:203
Abstract: This paper presents an innovative R2R (run to run) control strategy. This novel approach has made use of circuit design structure through virtually put up the structure before reach the actual stru...
Improvement of Environment Stability of an i-Line Chemically Amplified Photoresist
Authors: Haibo Li, Qian Yang, Jia Sun et al.
Keywords:Chemical amplification;thick film;i-Line;environment stability;Poly (p-hydroxyl styrene);PAB;PEB
doi:10.33079/jomm.21040201
Volume 4, Issue 2: 21040201, 2021 | PDF
Research Article
Published:
Views:555
Abstract: An i-Line chemically amplified (ICA) thick film positive resist is reported in this paper. The impact of process conditions on photoresist performance was investigated. Pre-apply bake temperature a...
Patterning with Organized Molecules
Authors: Mark Neisser
Institution:Tan Kah Kee Innovation Laboratory
Keywords:Stochastics;Self-assembly;overlay;edge placement error;self-organizing;DNA origami;bottle brush polymers
doi:10.33079/jomm.21040202
Volume 4, Issue 2: 21040202, 2021 | PDF
Research Article
Published: Aug. 9, 2021
Views:373
Abstract: Decades of progress in the semiconductor industry has led to lithographically printed dimensions that are small enough that the positions of individual molecules and the stochastic variation in the...
New Progress of China's Integrated Circuit Design Industry
Keywords:test
doi:10.33079/jomm.21040203
Volume 4, Issue 2: 21040203, 2021 | PDF
Research Article
Published: June 30, 2021
Views:452
Abstract: China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momen...
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment
Authors: Cristina Medina-Bailon, Tapas Dutta, Fikru Adamu-Lema et al.
Institution:Device Modelling Group, James Watt School of Engineering, University of Glasgow
Keywords:Integrated Simulation Environment;Variability;Drift-Diffusion;Quantum Correction;Kubo-Greenwood;Non-Equilibrium Green’s Function
doi:10.33079/jomm.20030404
Volume 3, Issue 4: 20030404, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Views:1748
Abstract: This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group ...
First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design
Authors: Kun Luo, Kui Gong, Jiangchai Chen et al.
Institution:Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Keywords:2D materials heterojunction;tunnel-FET;gate-to-drain overlap;DFT-NEGF
doi:10.33079/jomm.20030405
Volume 3, Issue 4: 20030405, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Views:1265
Abstract: The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium ...
Material Modeling in Semiconductor Process Applications
Authors: Boris A. Voinov, Patrick H. Keys, Stephen M. Cea et al.
Institution:Logic Technology Development, Intel Corporation, Hillsboro OR
Keywords:TCAD;atomistic modeling;density functional theory;molecular dynamics;kinetic Monte Carlo
doi:10.33079/jomm.20030406
Volume 3, Issue 4: 20030406, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Views:1359
Abstract: During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel. In this ...
Fast and Accurate Machine Learning Inverse Lithography Using Physics Based Feature Maps and Specially Designed DCNN
Authors: Xuelong Shi, Yan Yan, Tao Zhou et al.
Institution:Shanghai IC Research and Development Center, Shanghai
Keywords:Optimal feature maps;inverse lithography technology (ILT);deep convolution neural network (DCNN)
doi:10.33079/jomm.20030407
Volume 3, Issue 4: 20030407, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Views:1621
Abstract: Inverse lithography technology (ILT) is intended to achieve optimal mask design to print a lithography target for a given lithography process. Full chip implementation of rigorous inverse lithograp...
Machine Learning based Optical Proximity Correction Techniques
Authors: Pengpeng Yuan, Taian Fan, Yaobin Feng et al.
Institution:Institute of Microelectronics, Chinese Academy of Science, Beijing
Keywords:optical proximity correction;machine learning;deep learning;lithography
doi:10.33079/jomm.20030408
Volume 3, Issue 4: 20030408, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Views:1361
Abstract: The shrinking of the size of the advanced technological nodes brings up new challenges to the semiconductor manufacturing community. The optical proximity correction (OPC) is invented to reduce the...
Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies
Authors: Salvatore M. Amoroso, Plamen Asenov, Jaehyun Lee et al.
Institution:Synopsys Europe, Ltd.
Keywords:DTCO;Statistical Variability;Process Variability;Semiconductor Memories;DRAM;CMOS;Scaling
doi:10.33079/jomm.20030409
Volume 3, Issue 4: 20030409, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Views:1180
Abstract: This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization (DTCO) of advanced semiconductor memories. After reviewing the DTCO approach to semiconductor devices scalin...