First-principles Simulations of Tunneling FETs Based on van der Waals MoTe<sub>2</sub>/SnS<sub>2</sub> Heterojunctions with Gate-to-drain Overlap Design

Research Article Current Issue • Versions 2 Vol 3 (4) : 20030405 2020

First-principles Simulations of Tunneling FETs Based on van der Waals MoTe₂/SnS₂ Heterojunctions with Gate-to-drain Overlap Design

DOI: 10.33079/jomm.20030405

： 2020 - 10 - 06

： 2020 - 12 - 14

： 2020 - 12 - 30

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