Research Article Current Issue Versions 2 Vol 3 (4) : 20030405 2020
Download
First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design
: 2020 - 10 - 06
: 2020 - 12 - 14
: 2020 - 12 - 30
1056 35 0
Statistics
Total views HTML PDF
1091 1056 35
Views by month
Total views
References
Journal of Microelectronic Manufacturing