Welcome to Journal of Microelectronic Manufacturing!
2020
Volume 3, Issue 2
  • Published: June 30, 2020
  • Supervised by:None
  • Hosted by:None
  • Published by:JoMM Editorial Office

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FinFET Performance Enhancement by Source/Drain Cavity Structure Optimization
Authors: Man Gu, Wenjun Li, Haiting Wang et al.
Institution:GLOBALFOUNDRIES Inc. US
Keywords:FinFET performance;parasitic resistance and capacitance;source/drain cavity;cavity implant
doi:10.33079/jomm.20030201
Issue 2: 20030201, 2020 | PDF
Published: June 8, 2020
Views:918
Abstract: Fin field-effect transistor (FinFET) technology has been introduced to the mainstream complementary metal-oxide semiconductor (CMOS) manufacturing for low-power and high-performance applications. H...
High-Pressure Oxidation on Ge: Improvement of Ge/GeO2 Interface and GeO2 Bulk Properties
Authors: ChoongHyun Lee
Institution:Zhejiang University
Keywords:High-pressure oxidation;Ge oxidation;High mobility channel;Ge/GeO2 interface;Interface trap density
doi:10.33079/jomm.20030202
Issue 2: 20030202, 2020 | PDF
Published: June 29, 2020
Views:580
Abstract: On the basis of thermodynamic and kinetic consideration of Ge-O system, high-pressure oxidation (HPO) on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant ...

Research Article top

Issue 2: 20030203, 2020 | PDF
Research Article
Published: June 29, 2020
Views:564
Abstract: China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momen...