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EUV Lithography: State-of-the-Art Review 38
Study of Inverse Lithography Approaches based on Deep Learning 28
Recent Progress of the Integrated Circuit Industry in China ― Overview of the Manufacturing Industry 13
Recognition and Visualization of Lithography Defects based on Transfer Learning 9
Key Process Approach Recommendation for 5 nm Logic Process Flow with EUV Photolithography 8
EUV Lithography: State-of-the-Art Review 624
The 2017 IRDS Lithography Roadmap 96
A Photolithography Process Design for 5 nm Logic Process Flow 84
Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing 69
Key Process Approach Recommendation for 5 nm Logic Process Flow with EUV Photolithography 59
EUV Lithography: State-of-the-Art Review 909
The 2017 IRDS Lithography Roadmap 171
Current Status of the Integrated Circuit Industry in China ― IC Special Equipment Industry 91
A Photolithography Process Design for 5 nm Logic Process Flow 84
Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma: A First-Principle Study 81
Current Status of the Integrated Circuit Industry in China ― Overview of the Memory Industry 572
EUV Lithography: State-of-the-Art Review 500
The 2017 IRDS Lithography Roadmap 257
Current Status of the Integrated Circuit Industry in China ― IC Manufacturing Industry 255
Study of Inverse Lithography Approaches based on Deep Learning 250
EUV Lithography: State-of-the-Art Review 6849
The 2017 IRDS Lithography Roadmap 2884
An Innovative Method to Improve Model Accuracy by Implementing Multi-models Scheme for 28nm Node and Below 2679
Current Status of the Integrated Circuit Industry in China ― IC Manufacturing Industry 2587
A Photolithography Process Design for 5 nm Logic Process Flow 2442
EUV Lithography: State-of-the-Art Review 9134
Current Status of the Integrated Circuit Industry in China ― IC Special Equipment Industry 8795
Current Status of the Integrated Circuit Industry in China —— IC Design Industry 8589
The 2017 IRDS Lithography Roadmap 3846
Current Status of the Integrated Circuit Industry in China ― IC Manufacturing Industry 3318
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White Light Interference Solution for Novel 3D NAND VIA Dishing Metrology
Authors: Xiaoye Ding, Sicong Wang, Yi Zhou et al.
Institution：Yangtze Memory Technologies Co, ., Ltd, Wuhan
Keywords：WLI；Dishing；Metrology；3D NAND；Bonding
doi：10.33079/jomm.19020407
Volume 2, Issue 4: 19020407, 2019 | PDF
Research Article
Published: Dec. 25, 2019
 Views：2672
Details
Abstract： In traditional 3D NAND design, peripheral circuit accounts for 20-30% of the chip real-estate, which reduces the memory density of flash memory. As 3D NAND technology stacks to 128 layers or higher...

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