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Online ISSN: 2578-3769


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An Innovative Method to Improve Model Accuracy by Implementing Multi-models Scheme for 28nm Node and Below
Authors: Qingchen Cao, Tianhui Li, Deyuan Xiao
Institution:SiEn (QingDao) Integrated Circuits Co., Ltd
Keywords:Image quality;lithography;OPC model;multi-model
Volume 2, Issue 3: 19020304, 2019 | PDF
Research Article
Published: Sept. 28, 2019
Abstract: As the process comes into 28nm node and below, lithography struggles stronger between high resolution (high NA) and enough process window especially for hole layers (Contacts and Vias). Taking more...
Innovation on Line Cut Methods of Self-aligned Multiple Patterning
Authors: Jeff Shu
Keywords:self-aligned multiple patterning;SAMP;self-aligned double patterning;SADP;self-aligned quadruple patterning;SAQP;line cut;edge placement error
Volume 2, Issue 3: 19020301, 2019 | PDF
Research Article
Published: Sept. 25, 2019
Abstract: Self-aligned multiple patterning (SAMP) can enable the semiconductor scaling before EUV lithography becomes mature for industry use. Theoretically any small size of pitch can be achieved by repeati...
Hotspot Detection of Semiconductor Lithography Circuits Based on Convolutional Neural Network
Authors: Xingyu Zhou, Youling Yu
Institution:Tongji University, Shanghai
Keywords:lithography;hotspot detection;CNN;deep learning
Volume 1, Issue 2: 18010205, 2018 | PDF
Research Article
Published: Dec. 27, 2018
Abstract: In the advanced semiconductor lithography manufacturing process, the sub-wavelength lithography gap may cause lithographic error and the difference between the wafer pattern and mask pattern which ...
Variational Level-set Formulation for Lithographic Source and Mask Optimization
Authors: Yijiang Shen, Zhenrong Zhang
Institution:Guangdong University of Technology
Keywords:computational lithography;variational level set;source and mask optimization;coupling image
Volume 1, Issue 2: 18010203, 2018 | PDF
Research Article
Published: Dec. 20, 2018
Abstract: This paper addresses the contributing factors in lithographic source and mask optimization, namely, the accuracy of the image formation model and the efficiency of the inverse imaging calculations ...
Compressive Sensing Approaches for Lithographic Source and Mask Joint Optimization
Authors: Xu Ma, Zhiqiang Wang, Gonzalo R. Arce
Institution:Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optics and Photonics, Beijing Institute of Technology, China
Keywords:Computational lithography;source mask optimization (SMO);compressive sensing (CS);inverse problem
Volume 1, Issue 2: 18010202, 2018 | PDF
Research Article
Published: Dec. 13, 2018
Abstract: Source and mask joint optimization (SMO) is a widely used computational lithography method for state-of-the-art optical lithography process to improve the yield of semiconductor wafers. Nowadays, c...